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| 2SD1928 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1928
DESCRIPTION
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 4A
·High DC Current Gain
: hFE= 2000(Min) @ IC= 4A
APPLICATIONS
·Designed for audio frequency power amplifier and low
speed switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
8
A
ICP
Collector Current-Pulse
12
A
IBB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25â
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
0.8
A
2
W
25
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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