2SD1918 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Silicon NPN Epitaxial

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1918
DESCRIPTION
·Suitable for middle power drivers
·High voltage:VCEO=160V
·Complementary PNP types:2SB1275
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Motor drivers,LED driver,Power supply
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1.5
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
3.0
A
10
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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