2SD1899-Z Datasheet, PDF (1/2 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR MP-3

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1899-Z
DESCRIPTION
·Low collector saturation voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High transition frequency applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
TJ
Junction Temperature
3
A
1.0
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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