2SD1897 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1897
DESCRIPTION
·With TO-220Fa package
·Low collector saturation voltage
·High power dissipation:P_C=30W@T_C=25℃
APPLICATIONS
·For low frequency power amplifier,power
driver and DC-DC converter applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
·
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-Peak
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
T_a=25℃
VALUE
100
100
5
5
10
30
2
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃