 English |
|
|
|
|
|
|
|
| 2SD1896 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – High Collector Power Dissipation | |||
| |||
|
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1896
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max.)@ IC= 3A
·High Collector Power Dissipation
·Good Linearity of hFE
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Pulse
Collector Power Dissipation
@ Ta=25â
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
100
V
5
V
5
A
10
A
2
W
40
150
â
-55~150
â
isc websiteï¼www.iscsemi.cn
1
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese