2SD1893 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type Darlington(For power amplification)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1893
DESCRIPTION
With TO-3PFa package
High DC current gain
Low collector saturation voltage
Complement to type 2SB1253
APPLICATIONS
Power amplification
Optimum for 40W high-fidelity output
applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
130
110
5
6
10
50
3
150
-55~150
UNIT
V
V
V
A
A
W