2SD1892 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type Darlington(For power amplification)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1892
DESCRIPTION
With TO-220Fa package
High DC current gain
Low collector saturation voltage
DARLINGTON
Complement to type 2SB1252
APPLICATIONS
Power amplification
Optimum for 35W high-fidelity output
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
T_a=25
VALUE
120
100
5
5
8
45
2
150
-55~150
UNIT
V
V
V
A
A
W