2SD1891 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1891
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 90V(Min)
·High DC Current Gain
: hFE= 5000(Min) @IC= 3A
·Low Collector Saturation Voltgae-
: VCE(sat)= 3.0V(Max.)@ IC= 3A
·Complement to Type 2SB1251
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·For power amplification
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
110
V
VCEO
Collector-Emitter Voltage
90
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICP
Collector Current-Peak
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
7
A
2
W
40
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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