2SD1857 Datasheet, PDF (1/2 Pages) Unisonic Technologies – POWER TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High breakdown voltage. (BV_CEO = 120V)
·Low collector output capacitance.
·High transition frequency. (fT = 50MHz)
·Complement to Type 2SB1236
APPLICATIONS
·Designed for audio amplifier,
voltage regulator, and general purpose power amplifiers.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
120
V
V_CEO
Collector-Emitter Voltage
120
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
1.5
A
I_CP
Collector Current-Pulse
3
A
P_C
Collector Power Dissipation
T_J
Junction Temperature
T_stg
Storage Temperature Range
10
W
150
℃
-55~150
℃
Product Specification
2SD1857
isc website：www.iscsemi.cn
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