2SD1856 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1856
DESCRIPTION
·High DC Current Gain
: hFE= 2000(Min) @IC= 2A
·Low Collector Saturation Voltgae-
: VCE(sat)= 1.5V(Max.)@ IC= 2A
·Bullt-in damper diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed forr Motor，Relay and Solenoid driver applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50-70
V
VCEO
Collector-Emitter Voltage
50-70
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
ICP
Collector Current-Peak
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
10
A
2
W
25
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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