2SD1845 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1845
DESCRIPTION
·Collector-Base Breakdown Voltage-
: V_CBO= 1500V (Min.)
·High Switching Speed
·Built-in Damper Diode
APPLICATIONS
·Designed for horizontal deflection output applications
.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector- Base Voltage
1500
V
V_CES
Collector-Emitter Voltage
1500
V
V_EBO
Emitter-Base Voltage
7
V
I_C
Collector Current-Continuous
2.5
A
I_CM
Collector Current-Peak
7
A
I_BB
Base Current- Continuous
Collector Power Dissipation
@ T_a=25℃
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
1.5
A
3
W
60
150
℃
-55~150
℃
isc Website：www.iscsemi.cn