 English |
|
|
|
|
|
|
|
| 2SD1832 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
| |||
|
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1832
DESCRIPTION
·High Collector Current:: IC= 5A
·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max.)@IC= 3A
·Wide Area of Safe Operation
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
60
V
VCEO Collector-Emitter Voltage
60
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
PC
Total Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
10
A
30
W
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese