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| 2SD1829 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1829
DESCRIPTION
·High DC Current Gain-
: hFE= 1500(Min)@ (VCE= 3V, IC= 2.5A)
·Large Current Capability and Wide ASO.
·Complement to Type 2SB1227
APPLICATIONS
·Designed for use in control of motor drivers, printer
hammer drivers, relay drivers,and constant-voltage
regulators.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
110
V
VCEO Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25â
PC
Collector Power Dissipation
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature
8
A
2
W
25
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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