2SD1816 Datasheet, PDF (1/3 Pages) Unisonic Technologies – HIGH CURRENT SWITCHIG APPLICATIONS

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1816
DESCRIPTION
·Excellent linearity of hFE
·Small and slim package facilitating compactness of sets
·Low collector-to-emitter saturation voltage
·Fast switching speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Relay drivers,High speed inverters,converters and other
general high-current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
4
A
ICP
Collector Current-Pulse
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
8
A
20
W
1.0
W
150
℃
-55~150
℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}