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2SD1815 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – High-Current Switching Applications | |||
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1815
DESCRIPTION
·Excellent linearity of hFE
·Small and slim package making it easy to make 2SD1815/2SB1215-used set smaller
·Low collector-to-emitter saturation voltage
·High fT
·Fast switching speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Relay drivers,High speed inverters,converters and other
general high-current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
120
V
100
V
6
V
IC
Collector Current-Continuous
3
A
ICP
Collector Current-Pulse
Collector Power Dissipation
@ TC=25â
PC
Collector Power Dissipation
@ Ta=25â
TJ
Junction Temperature
6
A
20
W
1.0
W
150
â
Tstg
Storage Temperature Range
-55~150
â
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