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| 2SD1803 Datasheet, PDF (1/2 Pages) Unisonic Technologies – HIGH CURRENT SWITCHING APPLICATION | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Collector Current-IC= 5.0A
·Low Saturation Voltage -
: VCE(sat)= 0.4V(Max)@ IC= 3.0A, IB= 0.15A
·Good Linearity of hFE
·Complement to Type 2SB1203
APPLICATIONS
·Relay drivers,high-speed inverters,converters,
and other general high-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5.0
A
ICP
Collector Current-Pulse
Collector Power Dissipation
@ Ta=25â
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
8.0
A
1.0
W
20
150
â
-55~150 â
isc Product Specification
2SD1803
isc websiteï¼www.iscsemi.cn
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