2SD1801 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1801
DESCRIPTION
·Large current capacitance and wide ASO
·Small and slim package making it easy to make 2SD1801/2SB1201-used set smaller
·Low collector-to-emitter saturation voltage
·Fast switching speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Voltage regulators,relay drivers,lamp drivers,
electrical equipment
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
2
A
ICP
Collector Current-Pulse
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
4
A
15
W
0.8
W
150
℃
-55~150
℃
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