2SD180 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2SD180
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 70V(Min.)
·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max.)@ IC= 5A
·Good Linearity of hFE
APPLICATIONS
·Audio frequency power amplifier and low speed switching
·Suitable for output stages of 30 ~35 watts audio amplifier
and DC-DC converter.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
70
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
10
A
60
W
150
℃
Tstg
Storage Temperature
-65~＋150 ℃
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