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2SD1778 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1778
DESCRIPTION
·High Collector Current:: IC= 4A
·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max)@IC= 3A
·Wide Area of Safe Operation
·Complement to Type 2SB1334
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
80
V
VCEO Collector-Emitter Voltage
60
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
Total Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
6
A
40
W
150
℃
-55~150 ℃
isc Website:www.iscsemi.cn