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| 2SD1763A Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Complement to Type 2SB1186A | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1763A
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min.)
·Good Linearity of hFE
·Complement to Type 2SB1186A
APPLICATIONS
·Power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1.5
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25â
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
3
A
2
W
20
150
â
-55~150
â
isc websiteï¼www.iscsemi.cn
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