2SD1760 Datasheet, PDF (1/3 Pages) Rohm – Power Transistor 50V, 3A

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1760
DESCRIPTION
·Low VCE(sat)
·Small and slim package
·Complements the 2SB1184
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power dissipation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
PC
Collector Power Dissipation
1.5
W
TJ
Junction Temperature
Tstg
Storage Temperature Range
150
℃
-55~150
℃
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