2SD1756 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1756
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 170V(Min)
·High DC Current Gain
: h_FE= 1500(Min) @I_C= 5A
·Low Collector Saturation Voltage
APPLICATIONS
·Designed for high voltage high current amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
200
V
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current-Continuous
I_CP
Collector Current-Peak
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
200
V
7
V
10
A
15
A
40
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn