2SD1740 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – TRIPLE DIFFUSED PLANAR TYPE HIGH POWER DARLINGTON

isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
2SD1740
DESCRIPTION
·High DC Current Gain
·Excellent safe operating area
·High Reliability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Color &B/W TV power supply
·Active power filter
·Industrial use power supply
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
0.5
A
30
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
4.1 ℃/W
isc website：www.iscsemi.com
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