2SD1736 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1736
DESCRIPTION
·High Voltage
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
1500
V
V_CES
Collector-Emitter Voltage
1500
V
V_CEO
Collector-Emitter Voltage
700
V
V_EBO
Emitter-Base Voltage
7
V
I_C
Collector Current-Continuous
2.5
A
I_CP
Collector Current-Peak
7
A
I_BB
Base Current- Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
1
A
60
W
150
℃
-55-150 ℃
isc Website：www.iscsemi.cn