2SD1731 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – SILICON PNP TRIPLE DIFFUSED PLANAR TYPE HORIZONTAL DEFLECTION OUTPUT

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1731
DESCRIPTION
·High Voltage
·High Switching Speed
·Built-in damper diode
·Wide Area of Safe Operation
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_CBO
Collector-Base Voltage
1500
V
V_CES
Collector-Emitter Voltage
1500
V
V_CEO
Collector-Emitter Voltage
700
V
V_EBO
Emitter-Base Voltage
7
V
I_C
Collector Current-Continuous
6
A
I_CP
Collector Current-Peak
18
A
I_BB
Base Current- Continuous
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
2.5
A
100
W
150
℃
-55-150 ℃
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