2SD1718 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1718
DESCRIPTION
·With TO-3PL package
·Complement to type 2SB1163
·Excellent linearity of h_FE
·Wide area of safe operation (ASO)
·High transition frequency f_T
APPLICATIONS
·For high power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CM
Collector current-peak
P_C
Collector power dissipation
T_C=25℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
180
180
5
15
25
3.5
150
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃