2SD1712 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1712
DESCRIPTION
·
·With TO-3PFa package
·Complement to type 2SB1157
·High transition frequency f_T
·Satisfactory linearity of h_FE
·Wide area of safe operation
APPLICATIONS
·For high power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CP
Collector current-peak
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
T_a=25℃
VALUE
100
100
5
5
8
60
3
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃