|
2SD1706 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – SILICON NPN EPITAXIAL PLANAR TYPE POWER SWITCHING | |||
|
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1706
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
·Good Linearity of hFE
·Low Collector Saturation Voltage-
: VCE(sat)= 0.5V(Max.)@ IC= 7A
·Complement to Type 2SB1155
APPLICATIONS
·Designed for power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
130
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICP
Collector Current-Pulse
Collector Power Dissipation
@ TC=25â
PC
Collector Power Dissipation
@ Ta=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
80
V
7
V
15
A
25
A
80
W
3
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
|
▷ |