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| 2SD1692 Datasheet, PDF (1/2 Pages) NEC – NPN SILICON DARLINGTON TRANSISTOR | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1692
DESCRIPTION
·CollectorâEmitter Sustaining Voltageâ
: VCEO(SUS) = 100V(min.)
·DC Current Gainâ
: hFE = 2000(Min.) @ IC= 1.5 A
·Complement to Type 2SB1149
APPLICATIONS
·Designed for general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
Collector Power Dissipation
Ta=25â
PC
Collector Power Dissipation
TC=25â
Ti
Junction Temperature
Tstg
Storage Temperature Range
8
V
±3
A
±5
A
1.3
W
15
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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