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2SD1683 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Complement to Type 2SB1143
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1683
DESCRIPTION
·High Collector Current-IC= 4A
·Low Saturation Voltage -
: VCE(sat)= 0.5V(Max)@ IC= 2A
·Complement to Type 2SB1143
APPLICATIONS
·Designed for use in voltage regulations, relay drivers, lamp
drivers and electrical equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
4
A
ICP
Collector Current-Pulse
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
6
A
1.5
W
10
150
℃
-55~150 ℃
isc website:www.iscsemi.cn
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