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| 2SD1670 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1670
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
·High DC Current Gain-
: hFE= 1000( Min.) @ IC= 10A
·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ IC= 10A
APPLICATIONS
·For low speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
8
V
±10
A
±20
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25â
PC
Collector Power Dissipation
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature
1
A
3.5
W
65
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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