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| 2SD1662 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING APPLICATIONS) | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1662
DESCRIPTION
·High DC Current Gain
: hFE= 1000(Min.)@ IC= 15A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 100V(Min.)
·Low Collector Saturation Voltage
: VCE(sat) = 1.5V(Max.)@ IC= 15A
APPLICATIONS
·Designed for high current switching application.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
100
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
IB
Base Current- Continuous
Collector Power Dissipation
PC
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
1
A
100
W
150
â
-55~150 â
isc websiteï¼www.iscsemi.cn
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