2SD1647 Datasheet, PDF (1/2 Pages) Rohm – EPITAXIAL PLANAR NPN SILICON DARLINGTON TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1647
DESCRIPTION
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 1A
·High DC Current Gain
: hFE= 1000(Min) @IC= 1.0A
·Low Saturation Voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low frequency
power Amp applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50-70
V
VCEO
Collector-Emitter Voltage
50-70
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
2
A
ICP
Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
3
A
25
W
150
℃
-55~150
℃
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