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| 2SD1646 Datasheet, PDF (1/2 Pages) Rohm – EPITAXIAL PLANAR NPN SILICON DARLINGTON TRANSISTOR | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1646
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.)
·High DC Current Gain
: hFE= 1000(Min) @IC= 1A
·Low Collector Saturation Voltage
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
2
A
ICP
Collector Current-Peak
Collector Power Dissipation
@ Ta=25â
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
3
A
1.5
W
25
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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