2SD1640 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar darlington type AF output amplifier

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1640
DESCRIPTION
·Collector–Emitter Breakdown Voltage—
: V(BR)CEO = 100V(Min)
·DC Current Gain—
: hFE = 4000(Min) @ IC= 1 A
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use as output devices in complementary
general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
TC=25℃
Ti
Junction Temperature
Tstg
Storage Temperature Range
3
A
20
W
150
℃
-55~150
℃
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