2SD1609 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1609
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min)
·Good Linearity of hFE
·100% avalanche tested
·Complement to Type 2SB1109
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low frequency and high-voltage amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
160
UNIT
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
0.1
A
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
12.5
W
1.25
150
℃
Tstg
Storage Temperature Range
-45~150
℃
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