2SD1607 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1607
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= 5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 120V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 2.0V(Max)@ IC= 5A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
120
V
VCEO Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current- Continuous
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
0.5
A
40
W
150
℃
-55~150 ℃
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