2SD1600 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1600
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= 4A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 80V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 2.0V(Max)@ IC= 4A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current- Continuous
Collector Power Dissipation
PC
@TC=25℃
Collector Power Dissipation
@Ta=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
8
A
12
A
0.3
A
40
W
2
150
℃
-65~150 ℃
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