2SD1576 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Horizontal Deflection Output

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1576
DESCRIPTION
·High Collector-Base Breakdown Voltage-
: V_(BR)CBO= 1500V (Min.)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
1500
V
V_CES
Collector- Emitter Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current- Continuous
1500
V
700
V
6
V
2
A
I_CM
Collector Current-Peak
6
A
I_BM
Base Current-Peak
Collector Power Dissipation
@ T_a=25℃
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
2.5
A
2.5
W
80
150
℃
-55~150
℃
isc Website：www.iscsemi.cn