2SD1575 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – High Switching Speed

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Breakdown Voltage-
: V_CBO= 1200V (Min)
·High Switching Speed
·High Reliability
·Wide Area of Safe Operation
APPLICATIONS
·Designed for horizontal deflection output applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
1200
V
V_CES
Collector-Emitter Voltage
1200
V
V_CEO
Collector-Emitter Voltage
700
V
V_EBO
Emitter-Base Voltage
6
V
I_C
Collector Current- Continuous
2
A
I_CP
Collector Current-Peak
6
A
I_BP
Base Current-Peak
2.5
A
I_BP
Reverse Base Current-Peak
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
-1.5
A
40
W
150
℃
-55~150
℃
isc Product Specification
2SD1575
isc website：www.iscsemi.cn
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