2SD1563A Datasheet, PDF (1/3 Pages) Rohm – Epitaxial Planar NPN Silicon Transistor

Inchange Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
With TO-126 package
Complement to type 2SB1086A
Wide area of safe operation
High breakdown voltage :BV _CEO=160V(min)
APPLICATIONS
For low frequency power amplifier
applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Product Specification
2SD1563A
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
T_a=25
VALUE
160
160
5
1.5
3.0
10
1.2
150
-55~150
UNIT
V
V
V
A
A
W