2SD1558 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1558
DESCRIPTION
· High DC Current Gain-
: hFE = 1000(Min)@ IC= 2A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 2A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
60
V
7
V
4
A
ICM
Collector Current-Peak
Collector Power Dissipation
@TC=25℃
PC
Collector Power Dissipation
@Ta=25℃
Tj
Junction Temperature
8
A
40
W
2
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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