2SD1552 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
isc Product Specification
2SD1552
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·Low Saturation Voltage
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Color TV horizontal output applications.
·Switching regulator output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
5
A
IB
Base Current- Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
2.5
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website： www.iscsemi.com
1 _{isc & iscsemi is registered trademark}