2SD1549 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
isc Product Specification
2SD1549
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 800V (Min)
·High Switching Speed
·Low Saturation Voltage
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in horizontal deflection circuits of
color TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
VEBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
IC
Collector Current- Continuous
ICM
Collector Current-Peak
IB
Base Current- Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
1000
V
800
V
5
V
5
A
8
A
2.5
A
50
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
isc website： www.iscsemi.com
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