2SD1540 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlingtion Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlingtion Power Transistor
2SD1540
DESCRIPTION
·High DC current gain-
hFE = 800 (Min) @ IC = 0.5A
·Collector-Emitter Breakdown Voltage-
V(BR)CEO= 100V(Min)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
VEBO
IC
IB
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Base Current
100
V
100
V
5
V
6
A
0.2
A
PC
Collector Power Dissipation@TC=25℃
60
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}