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| 2SD1533 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Wide Area of Safe Operation | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1533
DESCRIPTION
·Collector-Base Breakdown Voltage-
: V(BR)CBO = 500V(Min.)
·Wide Area of Safe Operation
APPLICATIONS
·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
12
V
IC
Collector Current
7
A
ICM
Collector Current-peak
14
A
IB
Base Current
Collector Power Dissipation
@Ta=25â
PC
Collector Power Dissipation
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
0.5
A
1.4
W
50
150
â
-55~150 â
isc websiteï¼www.iscsemi.cn
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