2SD1509 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (MICRO MOTOR DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS)

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1509
DESCRIPTION
·High DC Current Gain-
: hFE = 2000(Min)@ IC= 1A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 80V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC=1A
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
4
A
IB
Base Current
Collector Power Dissipation
PC
TC=25℃
Collector Power Dissipation
Ta=25℃
Tj
Junction Temperature
0.5
A
10
W
1.5
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
2.5 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
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