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| 2SD1487 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1487
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Max)@IC= 5A
·Wide Area of Safe Operation
·Complement to Type 2SB1056
APPLICATIONS
·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
140
V
VCEO
Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25â
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
12
A
3
W
80
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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