2SD1481 Datasheet, PDF (1/2 Pages) NEC – SILICON POWER TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1481
DESCRIPTION
·On-chip C-to-B Zener diode for surge voltage absorption
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 1A
·High DC Current Gain
: hFE= 2000(Min) @IC= 1A
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low-frequency amplifiers and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50-70
V
VCEO
Collector-Emitter Voltage
VEBO
IC
Emitter-Base Voltage
Collector Current-Continuous
ICP
Collector Current-Peak
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
50-70
V
7
V
2
A
4
A
0.2
A
15
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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