2SD1457 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type Darlington(For power amplification)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1457 2SD1457A
DESCRIPTION
With TO-3PFa package
High DC current gain
DARLINGTON
High V _CBO
APPLICATIONS
For power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PFa) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
2SD1457
2SD1457A
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CM
Collector current-peak
P_C
Collector power dissipation
T_C=25
T_a=25
T_j
Junction temperature
T_stg
Storage temperature
MAX
200
150
200
5
6
10
60
3.0
150
-55~150
UNIT
V
V
V
A
A
W